PRO Imagery Submittal - Radiation Harden GaN

jsc2025e015682 (3/6/2025) --- From left to right: students, Tuofu Zhama, Alex Katorkas, Haochen Zhao, and Principal Investigator Yuping Zeng stand beside the equipment for GaN devices electrical property measurement before the packaging. The High Performance Radiation Hardened GaN High Electron Mobility Transistors for Space Applications (Radiation Harden GaN) investigation studies how radiation affects a type of transistor used in the semiconductor industry. Researchers measure the performance of the devices before, during, and after flight to determine whether performance degrades. This could help determine how well the transistors can tolerate radiation in space. Image courtesy of Department of Electrical and Computer Engineering, University of Delaware.